Issue 37, 2015
From the journal:

Journal of Materials Chemistry C

A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials†

Volker L. Deringer,a   Wei Zhang,bc   Pascal Rausch,b   Riccardo Mazzarello,de   Richard Dronskowski*ae  and  Matthias Wuttig*be  

* Corresponding authors

a Institute of Inorganic Chemistry, RWTH Aachen University, Landoltweg 1, 52056 Aachen, Germany
E-mail: drons@HAL9000.ac.rwth-aachen.de

b Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
E-mail: wuttig@physik.rwth-aachen.de

c Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, P. R. China

d Institute for Theoretical Solid-State Physics, RWTH Aachen University, 52074 Aachen, Germany

e Jülich–Aachen Research Alliance (JARA-FIT and JARA-HPC), RWTH Aachen University, 52056 Aachen, Germany

Abstract

We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the “next-generation” material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge–Sb–Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.

Graphical abstract: A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials

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Article information

DOI
https://doi.org/10.1039/C5TC02314A
Article type
Communication
Submitted
28 Jul 2015
Accepted
24 Aug 2015
First published
26 Aug 2015

J. Mater. Chem. C, 2015,3, 9519-9523

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A chemical link between Ge–Sb–Te and In–Sb–Te phase-change materials

V. L. Deringer, W. Zhang, P. Rausch, R. Mazzarello, R. Dronskowski and M. Wuttig, J. Mater. Chem. C, 2015, 3, 9519 DOI: 10.1039/C5TC02314A

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