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Issue 17, 2015
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Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

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Abstract

Two new NDTI-based triad-type ambipolar molecular semiconductors (NDTI-BBT and NDTI-BNT) were designed and synthesized. The triads can afford solution-processed OFETs with well-balanced, high hole and electron mobilities, up to 0.25 and 0.16 cm2 V−1 s−1, respectively, which further leads to the successful demonstration of complementary-like inverters with high voltage gains of 281 and 254 in the first and third quadrants, respectively, under ambient conditions.

Graphical abstract: Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

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Publication details

The article was received on 18 Feb 2015, accepted on 21 Mar 2015 and first published on 24 Mar 2015


Article type: Communication
DOI: 10.1039/C5TC00486A
Citation: J. Mater. Chem. C, 2015,3, 4244-4249
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    Naphthodithiophenediimide (NDTI)-based triads for high-performance air-stable, solution-processed ambipolar organic field-effect transistors

    J. Hu, M. Nakano, I. Osaka and K. Takimiya, J. Mater. Chem. C, 2015, 3, 4244
    DOI: 10.1039/C5TC00486A

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