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Issue 17, 2015
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Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

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Abstract

We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (Hc) of 188 Oe and a remanent magnetization of 102 emu cm−3 at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm2 V−1 s−1 at room temperature.

Graphical abstract: Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

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Publication details

The article was received on 08 Jan 2015, accepted on 08 Mar 2015 and first published on 09 Mar 2015


Article type: Communication
DOI: 10.1039/C5TC00051C
Author version available: Download Author version (PDF)
Citation: J. Mater. Chem. C, 2015,3, 4235-4238
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    Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition

    C. Park, Y. Zhao, Y. Shon, I. T. Yoon, C. J. Lee, J. D. Song, H. Lee and E. K. Kim, J. Mater. Chem. C, 2015, 3, 4235
    DOI: 10.1039/C5TC00051C

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