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Issue 29, 2015
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Enhanced solar performance of chemical bath deposited-Zn(O,S)/Cu(In,Ga)Se2 solar cells via interface engineering by a wet soaking process

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Abstract

A facile wet soaking process by immersing a CIGS thin film in a mixed aqueous solution, containing gallium trichloride and thioacetamide at 80 °C for a few tens of seconds, was proposed to reduce the existence of defects in the CIGS absorption layer which can be confirmed by the temperature dependence of the open-circuit voltage (Voc). The depth profiles of X-ray photoelectron spectroscopy (XPS) results indicate that the gallium (Ga) concentration increases during the short wet soaking time, resulting in a widening of the band gap near the surface region. The enhanced carrier lifetime attributed to the Ga-induced defect reduction during thermal treatment of device fabrication was evaluated by time-resolved photoluminescence (TRPL) spectroscopy. With wet and light soaking processes, Voc, short circuit current (Jsc) and fill factor (F.F.) can be increased, yielding a significant enhancement in cell efficiency from ∼1% to ∼6.4%. We believe that this fast, simple and effective method can further stimulate the development of CBD-Zn(O,S)/post-selenization CIGS solar cells toward commercialized thin film photovoltaics.

Graphical abstract: Enhanced solar performance of chemical bath deposited-Zn(O,S)/Cu(In,Ga)Se2 solar cells via interface engineering by a wet soaking process

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Publication details

The article was received on 06 May 2015, accepted on 06 Jun 2015 and first published on 10 Jun 2015


Article type: Communication
DOI: 10.1039/C5TA03211C
Citation: J. Mater. Chem. A, 2015,3, 14985-14990
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    Enhanced solar performance of chemical bath deposited-Zn(O,S)/Cu(In,Ga)Se2 solar cells via interface engineering by a wet soaking process

    C. Chen, H. Tsai, T. Wu, Y. Yen, Y. Wang, C. Hsu, W. Tsai, H. Tsai, C. Shen, J. Shieh and Y. Chueh, J. Mater. Chem. A, 2015, 3, 14985
    DOI: 10.1039/C5TA03211C

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