Jump to main content
Jump to site search

Issue 30, 2015
Previous Article Next Article

Towards highly efficient photoanodes: the role of carrier dynamics on the photoelectrochemical performance of InGaN/GaN multiple quantum well coaxial nanowires

Author affiliations

Abstract

The carrier dynamics in highly active InGaN/GaN coaxial nanowire photoanodes were studied for photoelectrochemical water splitting applications that can provide deeper insight to enhance the photon-to-electron conversion efficiency. The carrier dynamics in InGaN/GaN multiple quantum well coaxial nanowires (MQW-CNWs) with three different quantum well (QW) thicknesses and the same barrier thickness were studied optically using temperature-dependent and time-resolved photoluminescence spectroscopies. The role of the carrier dynamics on the photoelectrochemical water splitting (PEC-WS) performance of the MQW-CNWs was also investigated. The dependence of the PEC-WS performance and carrier dynamics on the QW thickness provided results indicative of the impact of the exciton localization and the defect states in the photoanodic performance of the MQW-CNWs. Strong localization effects and defect-induced recombination have been shown using samples with a thin QW with thicknesses up to 3 nm. During the PEC-WS, the samples showed a large onset potential and a low photocurrent density that led to low incident-photon-to-current conversion efficiency (IPCE). As the QW thickness approached 6 nm, negligible localization as well as improved photoemission quality were achieved, which lead to a small overpotential and a high IPCE of approximately 15%. The result demonstrated that an efficient photoanode requires a high crystal quality and weak localization, which can be achieved through careful structural optimization.

Graphical abstract: Towards highly efficient photoanodes: the role of carrier dynamics on the photoelectrochemical performance of InGaN/GaN multiple quantum well coaxial nanowires

Back to tab navigation

Publication details

The article was received on 23 Jan 2015, accepted on 24 Feb 2015 and first published on 24 Feb 2015


Article type: Paper
DOI: 10.1039/C5RA01374G
Author version
available:
Download author version (PDF)
Citation: RSC Adv., 2015,5, 23303-23310
  •   Request permissions

    Towards highly efficient photoanodes: the role of carrier dynamics on the photoelectrochemical performance of InGaN/GaN multiple quantum well coaxial nanowires

    M. Ebaid, J. Kang, S. Lim, Y. Cho and S. Ryu, RSC Adv., 2015, 5, 23303
    DOI: 10.1039/C5RA01374G

Search articles by author

Spotlight

Advertisements