Issue 12, 2015
From the journal:

Nanoscale

Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

Writam Banerjee,*a   Nianduan Lu,a   Ling Li,a   Pengxiao Sun,a   Qi Liu,a   Hangbing Lv,a   Shibing Longa  and  Ming Liua  

* Corresponding authors

a Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Abstract

Retraction of ‘High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory’ by Writam Banerjee et al., Nanoscale, 2014, advance article (C4NR05077K)

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Article information

DOI
https://doi.org/10.1039/C5NR90037A
Article type
Retraction
Submitted
04 Feb 2015
Accepted
04 Feb 2015
First published
18 Feb 2015
This article is Open Access
Creative Commons BY license

Nanoscale, 2015,7, 5545-5545

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Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

W. Banerjee, N. Lu, L. Li, P. Sun, Q. Liu, H. Lv, S. Long and M. Liu, Nanoscale, 2015, 7, 5545 DOI: 10.1039/C5NR90037A

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