Issue 4, 2016

Photocurrent enhancement of SiNW-FETs by integrating protein-shelled CdSe quantum dots

Abstract

We proposed a new strategy to increase the photoresponsivity of silicon NW field-effect transistors (FETs) by integrating CdSe quantum dots (QDs) using protein shells (PSs). CdSe QDs were synthesized using ClpP, a bacterial protease, as protein shells to control the size and stability of QD and to facilitate the mounting of QDs on SiNWs. The photocurrent of SiNW-FETs in response to light at a wavelength of 480 nm was enhanced by a factor of 6.5 after integrating CdSe QDs because of the coupling of the optical properties of SiNWs and QDs. As a result, the photoresponsivity to 480 nm light reached up to 3.1 × 106, the highest value compared to other SiNW-based devices in the visible light range.

Graphical abstract: Photocurrent enhancement of SiNW-FETs by integrating protein-shelled CdSe quantum dots

Supplementary files

Article information

Article type
Communication
Submitted
09 Nov 2015
Accepted
28 Dec 2015
First published
30 Dec 2015

Nanoscale, 2016,8, 1921-1925

Photocurrent enhancement of SiNW-FETs by integrating protein-shelled CdSe quantum dots

S. H. Moh, A. Kulkarni, B. H. San, J. H. Lee, D. Kim, K. S. Park, M. H. Lee, T. Kim and K. K. Kim, Nanoscale, 2016, 8, 1921 DOI: 10.1039/C5NR07901B

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