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Issue 5, 2016
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Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

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Abstract

We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

Graphical abstract: Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

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Publication details

The article was received on 30 Oct 2015, accepted on 30 Dec 2015 and first published on 31 Dec 2015


Article type: Paper
DOI: 10.1039/C5NR07597A
Citation: Nanoscale, 2016,8, 2844-2849
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    Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting

    M. Naffouti, T. David, A. Benkouider, L. Favre, A. Ronda, I. Berbezier, S. Bidault, N. Bonod and M. Abbarchi, Nanoscale, 2016, 8, 2844
    DOI: 10.1039/C5NR07597A

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