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Issue 46, 2015
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Probing individual point defects in graphene via near-field Raman scattering

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Abstract

The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest for future graphene electronic devices. The measured TERS spectra enable a direct determination of the average inter-defect distance within the graphene sheet. Analysis of the TERS enhancement factor of the graphene Raman peaks highlights the preferential enhancement and symmetry-dependent selectivity of the D-peak intensity caused by zero-dimensional Raman scatterers.

Graphical abstract: Probing individual point defects in graphene via near-field Raman scattering

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Publication details

The article was received on 11 Jul 2015, accepted on 18 Oct 2015 and first published on 22 Oct 2015


Article type: Communication
DOI: 10.1039/C5NR04664E
Author version available: Download Author version (PDF)
Citation: Nanoscale, 2015,7, 19413-19418
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    Probing individual point defects in graphene via near-field Raman scattering

    S. Mignuzzi, N. Kumar, B. Brennan, I. S. Gilmore, D. Richards, A. J. Pollard and D. Roy, Nanoscale, 2015, 7, 19413
    DOI: 10.1039/C5NR04664E

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