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Issue 27, 2015
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Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors

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Abstract

Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 105 times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

Graphical abstract: Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors

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Publication details

The article was received on 30 Mar 2015, accepted on 25 May 2015 and first published on 28 May 2015


Article type: Paper
DOI: 10.1039/C5NR02019K
Author version available: Download Author version (PDF)
Citation: Nanoscale, 2015,7, 11660-11666
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    Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors

    N. Huynh Van, J. Lee, D. Whang and D. J. Kang, Nanoscale, 2015, 7, 11660
    DOI: 10.1039/C5NR02019K

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