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Issue 15, 2015
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Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes

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Abstract

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

Graphical abstract: Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes

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Publication details

The article was received on 29 Dec 2014, accepted on 13 Mar 2015 and first published on 16 Mar 2015


Article type: Paper
DOI: 10.1039/C4NR07650H
Citation: Nanoscale, 2015,7, 6805-6812
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    Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes

    Y. Liu, N. Wei, Q. Zhao, D. Zhang, S. Wang and L. Peng, Nanoscale, 2015, 7, 6805
    DOI: 10.1039/C4NR07650H

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