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Issue 21, 2015
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Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions

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Abstract

This paper examines the ability of structural modifications using halogen atoms (F, Cl, Br, and I) to influence tunneling rates across self-assembled monolayer (SAM)-based junctions having the structure AgTS/S(CH2)n(p-C6H4X)//Ga2O3/EGaIn, where S(CH2)n(p-C6H4X) is a SAM of benzenethiol (n = 0) or benzyl mercaptan (n = 1) terminated in a hydrogen (X = H) or a halogen (X = F, Cl, Br, or I) at the para-position. The measured tunneling current densities (J(V); A cm−2) indicate that replacing a terminal hydrogen with a halogen atom at the X//Ga2O3 interface leads to a decrease in J(V) by ∼×13 for S(p-C6H4X) and by ∼×50 for SCH2(p-C6H4X). Values of J(V) for the series of halogenated SAMs were indistinguishable, indicating that changes in dipole moment and polarizability caused by introducing different halogen atoms at the interface between the SAM and the Ga2O3/EGaIn electrode do not significantly influence the rates of charge tunneling across the junctions.

Graphical abstract: Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions

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Publication details

The article was received on 10 Jan 2015, accepted on 29 Apr 2015 and first published on 30 Apr 2015


Article type: Communication
DOI: 10.1039/C5CP00145E
Citation: Phys. Chem. Chem. Phys., 2015,17, 13804-13807
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    Influence of halogen substitutions on rates of charge tunneling across SAM-based large-area junctions

    G. D. Kong, M. Kim, H. Jang, K. Liao and H. J. Yoon, Phys. Chem. Chem. Phys., 2015, 17, 13804
    DOI: 10.1039/C5CP00145E

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