Issue 79, 2015

Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier

Abstract

Wide gamut light emitting diodes using quantum dot-silicone film protected by atomic layer deposited TiO2 film were demonstrated. The core/shell QDs with multi-emission peaks were synthesised by a one-pot approach, in which the emission wavelength and colour composition were in situ adjusted during the synthetic process.

Graphical abstract: Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier

Supplementary files

Article information

Article type
Communication
Submitted
28 Jun 2015
Accepted
10 Aug 2015
First published
10 Aug 2015

Chem. Commun., 2015,51, 14750-14753

Wide gamut white light emitting diodes using quantum dot-silicone film protected by an atomic layer deposited TiO2 barrier

G. Chen, C. Yeh, M. Yeh, S. Ho and H. Chen, Chem. Commun., 2015, 51, 14750 DOI: 10.1039/C5CC05299H

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