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Issue 48, 2014
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Voltage sweep modulated conductance quantization in oxide nanocomposites

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Abstract

Bipolar resistive switching characteristics and conductance quantization behaviour as a function of voltage sweep have been demonstrated in a nanocomposite based device comprising of SnO2 nanoparticles residing over CeO2 nanorod arrays. The voltage sweep rate has been found to greatly influence the device performance. The stepwise conductance behaviour in the nanocomposite device emerged at a low voltage sweep rate and this behaviour can be attributed to the formation and disruption of atomic scale conducting filaments. In AC pulse mode, the quantized conductance states with integer or half integer multiples of Go were also observed. Furthermore, the impact of varying the SnO2 concentration on the resistive switching performance of the nanocomposite based device was also studied. The present study reveals that the conductance quantization behaviors can be well modulated by controlling the voltage sweep rate and in turn could offer the prospective of multi-level data storage capability.

Graphical abstract: Voltage sweep modulated conductance quantization in oxide nanocomposites

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Publication details

The article was received on 05 Sep 2014, accepted on 10 Oct 2014 and first published on 10 Oct 2014


Article type: Paper
DOI: 10.1039/C4TC01984A
Citation: J. Mater. Chem. C, 2014,2, 10291-10297
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    Voltage sweep modulated conductance quantization in oxide nanocomposites

    A. Younis, D. Chu and S. Li, J. Mater. Chem. C, 2014, 2, 10291
    DOI: 10.1039/C4TC01984A

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