Issue 2, 2014

Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes

Abstract

An advanced approach for resistive switching memory cells based on porous anodic alumina (Al2O3) membranes is reported. The effective resistive switching resulting in 6 orders of magnitude difference in resistivity between “on” and “off” states of the cell is achieved by specific electronic and ionic interaction between Ag nanowires filled in the membrane and an ionic conductor (AgxAsS2) deposited on the membrane by thermal evaporation. This easy and robust approach can be exploited for deposition of other ionic conductors for novel types of memories.

Graphical abstract: Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes

Supplementary files

Article information

Article type
Paper
Submitted
07 Oct 2013
Accepted
28 Oct 2013
First published
31 Oct 2013
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2014,2, 349-355

Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes

J. Kolar, J. M. Macak, K. Terabe and T. Wagner, J. Mater. Chem. C, 2014, 2, 349 DOI: 10.1039/C3TC31969E

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