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Issue 48, 2014
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Inverted Schottky quantum dot solar cells with enhanced carrier extraction and air-stability

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Abstract

We introduce a novel colloidal quantum dot solar cell (CQD SC) architecture, defined as inverted Schottky CQD SCs, which consists of a thin film of PbS CQDs sandwiched between a low-work-function, transparent conducting oxide (Lϕ-TCO) and a high-work-function metal anode. On Lϕ-TCO substrates, which were generated by coating a thin layer of polyethylenimine (PEI) onto FTO, a series of inverted Schottky CQD SCs with varied PbS CQD sizes and QD layer thicknesses were fabricated and characterized using capacitance–voltage (CV), current–voltage (JV), and external quantum efficiency (EQE). A Schottky junction, of about 180 nm in width, was formed at the front TCO contact, resulting in an EQE of approximately 70% in the short-wavelength region. The champion device reached 3.8% AM1.5 in power conversion efficiency, and retained efficiency over several weeks of air-exposure. A record open-circuit voltage (VOC) of 0.75 V was achieved by employing PbS CQDs of 1.56 eV in the bandgap. Advantages including the simple device structure, efficient carrier extraction, and air-stability demonstrated in this study suggest that inverted Schottky CQD SCs can reduce the price per Watt ratio and facilitate the development of CQD tandem solar cells.

Graphical abstract: Inverted Schottky quantum dot solar cells with enhanced carrier extraction and air-stability

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Publication details

The article was received on 20 Aug 2014, accepted on 16 Oct 2014 and first published on 17 Oct 2014


Article type: Paper
DOI: 10.1039/C4TA04305G
Citation: J. Mater. Chem. A, 2014,2, 20799-20805
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    Inverted Schottky quantum dot solar cells with enhanced carrier extraction and air-stability

    X. Mai, H. J. An, J. H. Song, J. Jang, S. Kim and S. Jeong, J. Mater. Chem. A, 2014, 2, 20799
    DOI: 10.1039/C4TA04305G

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