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Issue 46, 2014
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Point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe

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Abstract

In this article we report point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe compounds. The substitution of trivalent Bi3+ with divalent Pb2+ led to the generation of more than one hole per single Pb atom. The origin of the extra charge carrier was discussed in terms of the formation energy of p-type native point defects, and it could be evidenced by the density functional theory calculations. Related charge transport properties indicated that control of the native point defect is critical to achieve high thermoelectric performance in BiCuOTe material system.

Graphical abstract: Point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe

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Publication details

The article was received on 07 Aug 2014, accepted on 06 Oct 2014 and first published on 06 Oct 2014


Article type: Paper
DOI: 10.1039/C4TA04057K
Author version available: Download Author version (PDF)
Citation: J. Mater. Chem. A, 2014,2, 19759-19764
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    Point defect-assisted doping mechanism and related thermoelectric transport properties in Pb-doped BiCuOTe

    T. An, Y. S. Lim, H. Choi, W. Seo, C. Park, G. Kim, C. Park, C. H. Lee and J. H. Shim, J. Mater. Chem. A, 2014, 2, 19759
    DOI: 10.1039/C4TA04057K

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