We report a simple two-step fabrication process of 3D porous Si/copper films by an electrodeposition method using a hydrogen gas bubble template. A 3D porous Si/copper film provides a large surface area, a highly conductive pathway, a short ion diffusion length, and buffer spaces to accommodate the stress during the cycling processes.
J. Suk, D. Y. Kim, D. W. Kim and Y. Kang, J. Mater. Chem. A, 2014, 2, 2478 DOI: 10.1039/C3TA14645F
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