Preparation and photoelectric property of a Cu2FeSnS4 nanowire array

Abstract

A single crystalline Cu₂FeSnS₄ nanowires array has been prepared via a convenient solution approach. Porous anodic aluminum oxide was used as a morphology directing template and played a significant role in the formation of single crystalline Cu₂FeSnS₄ nanowires. The as-prepared Cu₂FeSnS₄ nanowires are uniform with a [110] growth direction. Structure, morphology, composition and optical absorption properties of the as-prepared samples were characterized with X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy and UV-Vis spectrophotometry. The formation mechanism of Cu₂FeSnS₄ nanowires array has been discussed. Thin films prepared from Cu₂FeSnS₄ single crystalline nanowires displayed an obvious photoelectric response, suggesting their potential application as low cost solar absorber materials.