Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell

Abstract

A resistive switching (RS) device of Ti/PEDOT:PSS/Ti, which is favourable for simulating learning processes, was made in this study. The conventional synaptic potentiation, depression plasticity and spike-timing-dependent plasticity, widely studied in neuroscience, were realized in this RS system. Our RS cell can be potentiated under moderate stimulation, but intensive or strong stimulation will trigger the depression mechanism without changing the bias sign. The characterizations of the chemical state suggest that the Ti compound forms at the interface and that PEDOT:PSS contributes to resistance switching and synaptic plasticity. We constructed the energy band diagram for the pristine device to provide a RS cell prototype applied in neuromorphic computing.