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Issue 20, 2014
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Controlling sulphur precursor addition for large single crystal domains of WS2

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Abstract

We show that controlling the introduction time and the amount of sulphur (S) vapour relative to the WO3 precursor during the chemical vapour deposition (CVD) growth of WS2 is critical to achieving large crystal domains on the surface of silicon wafers with a 300 nm oxide layer. We use a two furnace system that enables the S precursor to be separately heated from the WO3 precursor and growth substrate. Accurate control of the S introduction time enabled the formation of triangular WS2 domains with edges up to 370 μm which are visible to the naked eye. The WS2 domains exhibit room-temperature photoluminescence with a peak value around ∼635 nm and a full-width at half-maximum (FWHM) of ∼12 nm. Selected area electron diffraction from different regions of the triangular WS2 domains showed that they are single crystal structures.

Graphical abstract: Controlling sulphur precursor addition for large single crystal domains of WS2

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Publication details

The article was received on 19 Jul 2014, accepted on 14 Aug 2014 and first published on 08 Sep 2014


Article type: Paper
DOI: 10.1039/C4NR04091K
Citation: Nanoscale, 2014,6, 12096-12103
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    Controlling sulphur precursor addition for large single crystal domains of WS2

    Y. Rong, Y. Fan, A. Leen Koh, A. W. Robertson, K. He, S. Wang, H. Tan, R. Sinclair and J. H. Warner, Nanoscale, 2014, 6, 12096
    DOI: 10.1039/C4NR04091K

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