Issue 19, 2014

Driving forces for the self-assembly of graphene oxide on organic monolayers

Abstract

Graphene oxide (GO) flakes were self-assembled from solution on surfaces of self-assembled monolayers (SAMs), varying in the chemical structure of their head groups. The coverage density of GO relates to strength of attractive interaction, which is largest for Coulomb interaction provided by positively charged SAM head groups and negatively charged GO. A rough surface enhances the coverage density but with the same trend in driving force dependency. The self-assembly approach was used to fabricate field-effect transistors with reduced GO (rGO) as active layer. The SAMs as attractive layer for self-assembly remain almost unaffected by the reduction from GO to rGO and serve as ultra-thin gate dielectrics in devices, which operate at low voltages of maximum 3 V and exhibit a shift of the Dirac voltage related to the dipole moment of the SAMs.

Graphical abstract: Driving forces for the self-assembly of graphene oxide on organic monolayers

Supplementary files

Article information

Article type
Paper
Submitted
09 May 2014
Accepted
07 Aug 2014
First published
11 Aug 2014
This article is Open Access
Creative Commons BY license

Nanoscale, 2014,6, 11344-11350

Driving forces for the self-assembly of graphene oxide on organic monolayers

J. Kirschner, Z. Wang, S. Eigler, H. Steinrück, C. M. Jäger, T. Clark, A. Hirsch and M. Halik, Nanoscale, 2014, 6, 11344 DOI: 10.1039/C4NR02527J

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