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Issue 17, 2014
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Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma

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Abstract

We have demonstrated that the electrical property of single-layer molybdenum disulfide (MoS2) can be significantly tuned from the semiconducting to the insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single-layer MoS2 devices were varied by up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two-dimensional nanodevices based on MoS2 and other transition metal dichalcogenides.

Graphical abstract: Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma

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Publication details

The article was received on 21 Apr 2014, accepted on 13 Jun 2014 and first published on 17 Jun 2014


Article type: Paper
DOI: 10.1039/C4NR02142H
Citation: Nanoscale, 2014,6, 10033-10039
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    Tuning the electrical property via defect engineering of single layer MoS2 by oxygen plasma

    M. R. Islam, N. Kang, U. Bhanu, H. P. Paudel, M. Erementchouk, L. Tetard, M. N. Leuenberger and S. I. Khondaker, Nanoscale, 2014, 6, 10033
    DOI: 10.1039/C4NR02142H

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