Issue 12, 2014

2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays

Abstract

Using 2D XANES-XEOL spectroscopy, it is found that the band gap emission of ZnO nanowire arrays is substantially enhanced i.e. that the intensity ratio between the band gap and defect emissions increases by more than an order of magnitude when the excitation energy is scanned across the O K-edge. Possible mechanisms are discussed.

Graphical abstract: 2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays

Supplementary files

Article information

Article type
Communication
Submitted
25 Feb 2014
Accepted
20 Apr 2014
First published
22 Apr 2014

Nanoscale, 2014,6, 6531-6536

Author version available

2D XANES-XEOL mapping: observation of enhanced band gap emission from ZnO nanowire arrays

Z. Wang, X. Guo and T. Sham, Nanoscale, 2014, 6, 6531 DOI: 10.1039/C4NR01049C

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