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Issue 10, 2014
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High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

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Abstract

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Graphical abstract: High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

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Publication details

The article was received on 17 Dec 2013, accepted on 09 Mar 2014 and first published on 12 Mar 2014


Article type: Paper
DOI: 10.1039/C3NR06690H
Citation: Nanoscale, 2014,6, 5479-5483
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    High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

    N. H. Van, J. Lee, J. I. Sohn, S. N. Cha, D. Whang, J. M. Kim and D. J. Kang, Nanoscale, 2014, 6, 5479
    DOI: 10.1039/C3NR06690H

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