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Issue 40, 2014
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Effect of metal doping, doped structure, and annealing under argon on the properties of 30 nm thick ultrathin hematite photoanodes

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Abstract

The doping of the whole hematite layer with W (9.4%) and the additional doping of the bottom half of the W-doped hematite layer with Sn (8.6%), and the subsequent annealing under argon at 600 °C give rise to large increases in the Fe2+ concentration (by >∼200 times), carrier density (Cd, by ∼48 times) and current density (id, by ∼8 times at 1.23 V vs. RHE, under 1 sun) with respect to those of bare hematite photoanodes. The measured id (0.9 mA cm−2) is the highest among those of the ultrathin hematite photoanodes and the measured Cd (3.8 × 1022 cm−3) is the highest among those ever observed for hematite.

Graphical abstract: Effect of metal doping, doped structure, and annealing under argon on the properties of 30 nm thick ultrathin hematite photoanodes

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Publication details

The article was received on 24 Jun 2014, accepted on 11 Aug 2014 and first published on 11 Aug 2014


Article type: Communication
DOI: 10.1039/C4CP02765E
Author version available: Download Author version (PDF)
Citation: Phys. Chem. Chem. Phys., 2014,16, 21936-21940
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    Effect of metal doping, doped structure, and annealing under argon on the properties of 30 nm thick ultrathin hematite photoanodes

    T. Kim, H. S. Kim, I. Hwang and K. B. Yoon, Phys. Chem. Chem. Phys., 2014, 16, 21936
    DOI: 10.1039/C4CP02765E

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