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Issue 29, 2014
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Extreme strain rate and temperature dependence of the mechanical properties of nano silicon nitride thin layers in a basal plane under tension: a molecular dynamics study

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Abstract

Molecular dynamics simulations are performed to clarify the extreme strain rate and temperature dependence of the mechanical behaviors of nano silicon nitride thin layers in a basal plane under tension. It is found that fracture stresses show almost no change with increasing strain rate. However, fracture strains decrease gradually due to the appearance of additional N2c–Si bond breaking defects in the deformation process. With increasing loading temperature, there is a noticeable drop in fracture stress and fracture strain. In the low temperature range, roughness phases can be observed owing to a combination of factors such as configuration evolution and energy change.

Graphical abstract: Extreme strain rate and temperature dependence of the mechanical properties of nano silicon nitride thin layers in a basal plane under tension: a molecular dynamics study

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Publication details

The article was received on 18 Feb 2014, accepted on 30 Mar 2014 and first published on 31 Mar 2014


Article type: Paper
DOI: 10.1039/C4CP00714J
Author version available: Download Author version (PDF)
Citation: Phys. Chem. Chem. Phys., 2014,16, 15551-15557
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    Extreme strain rate and temperature dependence of the mechanical properties of nano silicon nitride thin layers in a basal plane under tension: a molecular dynamics study

    X. Lu, H. Wang, Y. Wei, J. Wen, M. Niu and S. Jia, Phys. Chem. Chem. Phys., 2014, 16, 15551
    DOI: 10.1039/C4CP00714J

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