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Issue 22, 2014
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Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

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Abstract

In this study, we have elucidated the interactions between ozone and carbon nanotubes by monitoring the characteristics of field-effect transistors based on polymer-sorted, large-diameter semiconducting carbon nanotubes. The drain–source current of these transistors initially increases with ozone exposure and then it progressively decreases with increasing exposure beyond 3 min. This non-monotonic dependence of the drain–source current can be ascribed to two competing processes. At short ozone exposure, p-doping of carbon nanotubes dominates; the drain–source current thus increases as a result of increasing hole concentration. This effect is most evidenced in a progressive threshold voltage shift towards positive voltages with increasing exposure to ozone. At extended ozone exposure, chemical oxidation of carbon nanotubes instead dominates. The drain–source current decreases as a result of decreasing hole mobility. This effect manifests itself in a monotonic decrease in the mobility of these devices as a function of ozone exposure.

Graphical abstract: Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

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Publication details

The article was received on 14 Feb 2014, accepted on 06 Apr 2014 and first published on 08 Apr 2014


Article type: Paper
DOI: 10.1039/C4CP00665H
Author version available: Download Author version (PDF)
Citation: Phys. Chem. Chem. Phys., 2014,16, 10861-10865
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    Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

    J. Gao and Y. Loo, Phys. Chem. Chem. Phys., 2014, 16, 10861
    DOI: 10.1039/C4CP00665H

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