Jump to main content
Jump to site search

Issue 29, 2014
Previous Article Next Article

Flexible and stretchable thin-film transistors based on molybdenum disulphide

Author affiliations

Abstract

The outstanding physical and chemical properties of two-dimensional materials, which include graphene and transition metal dichalcogenides, have allowed significant applications in next generation electronics. In particular, atomically thin molybdenum disulphide (MoS2) is attracting widespread attention because of its large bandgap, effective carrier mobility, and mechanical strength. In addition, recent developments in large-area high-quality sample preparation methods via chemical vapour deposition have enabled the use of MoS2 in novel functional applications, such as flexible and stretchable electronic devices. In this perspective, we focus on the current progress in generating MoS2-based flexible and stretchable thin-film transistors. The reported virtues and novelties of MoS2 provide significant advantages for future flexible and stretchable electronics.

Graphical abstract: Flexible and stretchable thin-film transistors based on molybdenum disulphide

Back to tab navigation

Publication details

The article was received on 13 Dec 2013, accepted on 27 Feb 2014 and first published on 27 Feb 2014


Article type: Perspective
DOI: 10.1039/C3CP55270E
Citation: Phys. Chem. Chem. Phys., 2014,16, 14996-15006
  •   Request permissions

    Flexible and stretchable thin-film transistors based on molybdenum disulphide

    J. Pu, L. Li and T. Takenobu, Phys. Chem. Chem. Phys., 2014, 16, 14996
    DOI: 10.1039/C3CP55270E

Search articles by author

Spotlight

Advertisements