Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals
Abstract
Polycrystalline materials of REVO4 (RE = Y, Lu, Yb) were synthesized by liquid-phase reaction. An Yb-doped Yb:Y0.71Lu0.29VO4 crystal was grown by the Czochralski method. Dislocations and low-angle boundaries were revealed by chemical etching and transmission electron microscopy (TEM). Continuous-wave (cw) laser action was achieved in the range of 1020.7–1029.0 nm by using a high-power diode laser as the pump source. A cw laser output power of 1.09 W with a slope efficiency of 21.6% was demonstrated for this 0.5 at.% Yb-doped Yb:Y0.79Lu0.21VO4 mixed crystal.