Issue 36, 2014

Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

Abstract

Polycrystalline materials of REVO4 (RE = Y, Lu, Yb) were synthesized by liquid-phase reaction. An Yb-doped Yb:Y0.71Lu0.29VO4 crystal was grown by the Czochralski method. Dislocations and low-angle boundaries were revealed by chemical etching and transmission electron microscopy (TEM). Continuous-wave (cw) laser action was achieved in the range of 1020.7–1029.0 nm by using a high-power diode laser as the pump source. A cw laser output power of 1.09 W with a slope efficiency of 21.6% was demonstrated for this 0.5 at.% Yb-doped Yb:Y0.79Lu0.21VO4 mixed crystal.

Graphical abstract: Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

Article information

Article type
Paper
Submitted
07 Jan 2014
Accepted
17 Jul 2014
First published
17 Jul 2014

CrystEngComm, 2014,16, 8406-8412

Author version available

Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

D. Zhong, B. Teng, L. Cao, S. Zhang, F. You, B. Zhang, J. Li, X. Tian, C. Wang, Y. Li, L. He and R. A. Rupp, CrystEngComm, 2014, 16, 8406 DOI: 10.1039/C4CE00042K

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