Flexible organic/inorganic heterojunction transistors with low operating voltage

Abstract

Solution processed organic/inorganic bilayers have been adopted for ambipolar transistors on flexible substrates. By interface engineering, a balanced hole and electron transport is achieved with low voltage operation for poly(3-hexylthiophene) (P3HT)/ZnO bilayers. Atomic force microscopy (AFM), grazing incidence X-ray diffraction (GIXRD), UV-visible absorption spectroscopy and steady-state photoluminescence (PL) spectroscopy are used to analyze the heterostructure film. The ambipolar transistors were relatively stable under various light illuminations and exhibited high mechanical flexibility. The findings provide a better understanding of tunable electrical performance of the organic/inorganic heterojunction and demonstrate their potential application for low voltage electronic devices.