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Issue 39, 2013
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Catalyst-free growth of readily detachable nanographene on alumina

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Abstract

We have grown graphene directly on alumina (Al2O3) substrates without catalysts using conventional thermal chemical vapor deposition. By choosing Al2O3 as a growth substrate, the polycrystallinity of graphene was enhanced to form nanometer-size dome-like grains, which ensured a statistically homogeneous electrical property of graphene over a large area. As-grown bilayer, the nanographene (nGr) film showed a sheet resistance of ∼3 kΩ □−1 with a standard deviation of ∼2.3% over 15 mm × 15 mm. Top- and bottom-gate nGr thin film transistors (TFTs) fabricated directly on the Al2O3 substrate exhibited field-effect mobilities of 89 and 41 cm2 V−1 s−1, respectively. Moreover, the grown nGr could be easily detached from the Al2O3 substrate due to weak adhesion between the nGr and Al2O3, which has abundant fixed charges. Dry-transfer of the grown nGr from the Al2O3 substrate was realized via spin-coating a polyimide (PI) or poly(4-vinylphenol) film and subsequently detaching the film together with the nGr film. The recycled substrates provided the nGr films with reproducibility. The nGr devices on a 3 μm-thick PI film were stable upon bending with a bending diameter of down to 6 mm.

Graphical abstract: Catalyst-free growth of readily detachable nanographene on alumina

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Publication details

The article was received on 05 Jul 2013, accepted on 09 Aug 2013 and first published on 12 Aug 2013


Article type: Paper
DOI: 10.1039/C3TC31287A
Citation: J. Mater. Chem. C, 2013,1, 6438-6445
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    Catalyst-free growth of readily detachable nanographene on alumina

    J. Park, K. H. Kim, J. Kim, C. J. Lee, J. H. Shim, Y. Song and J. S. Ha, J. Mater. Chem. C, 2013, 1, 6438
    DOI: 10.1039/C3TC31287A

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