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Issue 46, 2013
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Effect of the molecular weight of the polymer gate dielectric on the performances of solution-processed ambipolar OTFTs

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Abstract

Gate dielectrics in organic thin-film transistors (TFTs) play a vital role in governing the overall performance of the device since the charge transport channel is formed in the active layer of the device at the interface with the dielectric. In this article the influence of the molecular weight (Mw) of the polymer dielectric on the electrical performances of an ambipolar TFT is explored. The transport of both electrons and holes is probed in devices integrating two different polymer dielectrics with three different Mw. We found that the molecular weight plays a subtle role on the major device parameters such as field-effect mobility, threshold and on voltage as well as sub-threshold slope. Furthermore, the use of a top-gate architecture provides general importance to our results given that the surface properties of the dielectrics do not affect the growth mechanisms of the already-deposited amorphous semiconductor polymer.

Graphical abstract: Effect of the molecular weight of the polymer gate dielectric on the performances of solution-processed ambipolar OTFTs

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Publication details

The article was received on 24 May 2013, accepted on 08 Aug 2013 and first published on 08 Aug 2013


Article type: Paper
DOI: 10.1039/C3TC31080A
Citation: J. Mater. Chem. C, 2013,1, 7725-7730
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    Effect of the molecular weight of the polymer gate dielectric on the performances of solution-processed ambipolar OTFTs

    A. Merari Masillamani, E. Orgiu and P. Samorì, J. Mater. Chem. C, 2013, 1, 7725
    DOI: 10.1039/C3TC31080A

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