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Issue 12, 2013
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Ultra low thermal conductivity of disordered layered p-type bismuth telluride

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Abstract

Disordered layered p-type bismuth telluride was obtained by high pressure (1 GPa) and high strain deformation along the c-axis direction of commercially available single crystals. After initial deformation the p-type bismuth telluride flakes were subsequently fully densified by cold pressing (800 MPa at room temperature). As a result of the severe plastic deformation, the samples showed highly anisotropic electrical and thermal conductivities. In particular, the thermal conductivity measured along the pressing direction was as low as 0.34 W m−1 K−1, which is one of the lowest values reported for fully dense p-type bismuth telluride. The full set of thermoelectric properties of the disordered bismuth antimony telluride is critically discussed.

Graphical abstract: Ultra low thermal conductivity of disordered layered p-type bismuth telluride

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Publication details

The article was received on 24 Jan 2013, accepted on 24 Jan 2013 and first published on 14 Feb 2013


Article type: Paper
DOI: 10.1039/C3TC30152D
Citation: J. Mater. Chem. C, 2013,1, 2362-2367
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    Ultra low thermal conductivity of disordered layered p-type bismuth telluride

    S. Grasso, N. Tsujii, Q. Jiang, J. Khaliq, S. Maruyama, M. Miranda, K. Simpson, T. Mori and M. J. Reece, J. Mater. Chem. C, 2013, 1, 2362
    DOI: 10.1039/C3TC30152D

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