Issue 18, 2013

Retracted Article: Enhanced photoluminescence, Raman spectra and field-emission behavior of indium-doped ZnO nanostructures

Abstract

Indium-doped (In-doped) ZnO nanostructures with four different morphologies, namely nanochips, nanotripods, nanorods, and nanodisks, have been successfully synthesized by a simple hydrothermal method. The effects of indium dopant and various morphologies on the structural, optical and field-emission properties of these ZnO nanostructures were investigated. The XRD patterns demonstrated that the In-doped ZnO nanostructures exhibited the hexagonal wurtzite structure with preferential orientation along the (0 0 2) crystal plane, and a slight difference in lattice parameters was detected among the samples with various morphologies. The doped nanostructures were found to be single crystals grown along the c-axis. The composition of the doped ZnO nanostructures was confirmed by X-ray diffraction (XRD), X-ray photospectroscopy (XPS), and energy-dispersive spectroscopy (EDS). The photoluminescence (PL) spectra of doped ZnO nanostructures having a blue-shift in the UV region show a prominent tuning in the optical band gap, without any significant peak relating to intrinsic defects. From Raman spectra, the 437 cm−1 mode corresponds to the E2 mode for wurtzite ZnO crystals with very sharp features which revealed the better crystallinity of samples. The lowest turn-on field of the field-emission was found to be ∼2.5 V μm−1 and the highest emission current density of 1.13 mA cm−2 was also obtained for In-doped ZnO nanochips under a field of 6.3 V μm−1. The field enhancement factor β was estimated to be 10 640 ± 3 in the case of doped nanochips, which was much higher than that of any previous report. Moreover, the doped ZnO nanostructures exhibit good long period emission current stability with a variation of less than 5% during 25 h under a field of 6.3 V μm−1. The superior field-emission properties were attributed to the better morphologies, In-doping and better crystallinity of In-doped ZnO nanostructures.

Graphical abstract: Retracted Article: Enhanced photoluminescence, Raman spectra and field-emission behavior of indium-doped ZnO nanostructures

Associated articles

Supplementary files

Article information

Article type
Paper
Submitted
14 Jan 2013
Accepted
19 Mar 2013
First published
19 Mar 2013

J. Mater. Chem. C, 2013,1, 3138-3149

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