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Issue 6, 2013
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Computational testing of trivalent dopants in CeO2 for improved high-κ dielectric behaviour

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Abstract

Due to its high dielectric constant, large band gap, and very small lattice mismatch with Si, CeO2 has been proposed as a promising candidate high-κ dielectric material. The performance of CeO2 as a dielectric material, however, is severely limited due its propensity for facile reduction (oxygen vacancy formation), which causes a high interface state density, and subsequent decreased drain currents. In this article we use density functional theory (DFT) to screen for trivalent dopants which could decrease the concentration of defects in CeO2 samples. We demonstrate that La and Y are the most soluble trivalent dopants in CeO2, and can reduce the number of the electrons in the system both ionically (formation of [MCeVO–MCe] clusters) or to a lesser extent electronically (hole formation). La doping also increases the lattice constant of CeO2, improving the lattice match with Si.

Graphical abstract: Computational testing of trivalent dopants in CeO2 for improved high-κ dielectric behaviour

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Publication details

The article was received on 11 Oct 2012, accepted on 29 Nov 2012 and first published on 05 Dec 2012


Article type: Paper
DOI: 10.1039/C2TC00385F
Citation: J. Mater. Chem. C, 2013,1, 1093-1098
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    Computational testing of trivalent dopants in CeO2 for improved high-κ dielectric behaviour

    P. R. L. Keating, D. O. Scanlon and G. W. Watson, J. Mater. Chem. C, 2013, 1, 1093
    DOI: 10.1039/C2TC00385F

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