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Issue 8, 2013
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Influence of Te substitution on the structural and electronic properties of thermoelectric BiCuSeO

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Abstract

We report on the influence of tellurium substitution on the structural and electronic properties of the thermoelectric oxychalcogenide BiCuSeO. Our results show that a complete solid solution exists between the two end members BiCuSeO and BiCuTeO. However, a complex evolution of the properties has been observed, with both a monotonous evolution of the structural and electrical parameters between Te = 0.5 and Te = 1, and a structural anomaly between Te = 0.1 and Te = 0.5. This structural anomaly correlates with an evolution from a metallic-like electrical resistivity to a semiconducting behaviour with the opening of a small gap in the electronic structure, and it is essentially suppressed with hole doping performed by the partial substitution of Bi3+ by Sr2+. Lastly, our thermoelectric measurements evidence a large increase of the thermoelectric power factor for large Te fractions, which decrease upon hole doping.

Graphical abstract: Influence of Te substitution on the structural and electronic properties of thermoelectric BiCuSeO

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Publication details

The article was received on 24 Oct 2012, accepted on 21 Dec 2012 and first published on 18 Jan 2013


Article type: Paper
DOI: 10.1039/C2TA00818A
Citation: J. Mater. Chem. A, 2013,1, 2921-2926
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    Influence of Te substitution on the structural and electronic properties of thermoelectric BiCuSeO

    C. Barreteau, D. Bérardan, L. Zhao and N. Dragoe, J. Mater. Chem. A, 2013, 1, 2921
    DOI: 10.1039/C2TA00818A

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