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Issue 19, 2013
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Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

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Abstract

A 3D highly conductive urchin-like NiCo2S4 nanostructure has been successfully prepared using a facile precursor transformation method. Remarkably, the NiCo2S4 electroactive material demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance, and excellent cycling stability.

Graphical abstract: Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

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Publication details

The article was received on 07 Jun 2013, accepted on 14 Jul 2013 and first published on 16 Jul 2013


Article type: Communication
DOI: 10.1039/C3NR02958A
Citation: Nanoscale, 2013,5, 8879-8883
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    Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

    H. Chen, J. Jiang, L. Zhang, H. Wan, T. Qi and D. Xia, Nanoscale, 2013, 5, 8879
    DOI: 10.1039/C3NR02958A

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