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Issue 8, 2014
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Epitaxial graphene on SiC{0001}: advances and perspectives

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Abstract

We review here recent progress on epitaxial graphene grown on a SiC substrate. Epitaxial graphene can be easily grown by heating the SiC single crystal in a high vacuum or in an inert gas atmosphere. The SiC surfaces used for graphene growth contain Si- and C-terminated faces. On the Si-face, homogeneous and clean graphene can be grown with a controlled number of layers, and the carrier mobility reaches as high as several m2 V s−1, although this is reduced by the presence of the substrate steps. On the C-face, although the number of layers is not homogeneous, twisted bilayer graphene can be grown, which is expected to be the technique of choice to modify the electronic structure of graphene. From the application point of view, graphene on SiC will be the platform used to fabricate high-speed electronic devices and dense graphene nanoribbon arrays, which will be used to introduce a bandgap.

Graphical abstract: Epitaxial graphene on SiC{0001}: advances and perspectives

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Publication details

The article was received on 26 Oct 2013, accepted on 05 Dec 2013 and first published on 19 Dec 2013


Article type: Perspective
DOI: 10.1039/C3CP54523G
Citation: Phys. Chem. Chem. Phys., 2014,16, 3501-3511
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    Epitaxial graphene on SiC{0001}: advances and perspectives

    W. Norimatsu and M. Kusunoki, Phys. Chem. Chem. Phys., 2014, 16, 3501
    DOI: 10.1039/C3CP54523G

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