A fluorenone based low band gap solution processable copolymer for air stable and high mobility organic field effect transistors

Abstract

A fluorenone based alternating copolymer (PFN-DPPF) with a furan based fused aromatic moiety has been designed and synthesized. PFN-DPPF exhibits a small band gap with a lower HOMO value. Testing this polymer semiconductor as the active layer in organic thin-film transistors results in hole mobilities as high as 0.15 cm² V⁻¹ s⁻¹ in air.