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Low-voltage flexible pentacene thin film transistors with a solution-processed dielectric and modified copper source–drain electrodes

Corresponding authors
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, China
Siyuan Laboratory, Department of Physics, Jinan University, Guangdong, Guangzhou, P. R. China
J. Mater. Chem. C, 2013,1, 2585-2592

DOI: 10.1039/C3TC00577A
Received 07 Nov 2012, Accepted 04 Feb 2013
First published online 04 Feb 2013
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Journal of Materials Chemistry C - Information Point

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