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Issue 5, 2013
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Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates

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Abstract

We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.

Graphical abstract: Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates

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Publication details

The article was received on 20 Dec 2012, accepted on 16 Jan 2013 and first published on 21 Jan 2013


Article type: Communication
DOI: 10.1039/C3NR34200J
Citation: Nanoscale, 2013,5, 1820-1824
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    Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates

    Y. Yang, Y. Ling, G. Wang, X. Lu, Y. Tong and Y. Li, Nanoscale, 2013, 5, 1820
    DOI: 10.1039/C3NR34200J

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