Jump to main content
Jump to site search

Issue 16, 2013
Previous Article Next Article

Modulating the electronic properties of germanium nanowires via applied strain and surface passivation

Author affiliations

Abstract

We report a systematic study on the surface passivation and strain effects on the electronic properties of hydrogenated germanium nanowires (H-GeNWs) with different growth orientations and diameters using density functional theory calculations. We show that increasing the coverage percentage of halogen passivations – fluorine (F) and chlorine (Cl) in particular – reduces the band gap of the GeNWs drastically but not linearly, depending on the chemical environment of the passivation sites. Moreover, we find that in general, applying strain – either compression or tensile – can only induce a decreased band gap in GeNWs but exception is found in 〈110〉 GeNWs: an increased band gap can be induced which is determined to be related to their surface structures. The current work reveals that electronic response upon structural changes caused by external factors is more sensitive in 〈110〉 GeNWs than in 〈100〉 GeNWs, suggesting that GeNWs with selected growth orientation can be applied in specialized applications that require different degrees of sensitivity or robustness.

Graphical abstract: Modulating the electronic properties of germanium nanowires via applied strain and surface passivation

Back to tab navigation

Supplementary files

Publication details

The article was received on 08 Oct 2012, accepted on 21 Feb 2013 and first published on 22 Feb 2013


Article type: Paper
DOI: 10.1039/C3CP43530J
Citation: Phys. Chem. Chem. Phys., 2013,15, 5927-5935
  •   Request permissions

    Modulating the electronic properties of germanium nanowires via applied strain and surface passivation

    M. A. Sk, M. Ng, L. Huang and K. H. Lim, Phys. Chem. Chem. Phys., 2013, 15, 5927
    DOI: 10.1039/C3CP43530J

Search articles by author

Spotlight

Advertisements