A physics/circuit-based switching model for carbon-based resistive memory with sp2/sp3 cluster conversion

Abstract

The switching mechanism in carbon-based resistive-switching random access memory is modelled using a percolation approach built on the low-temperature transition between phases sp³ (diamond-like and high-resistive state) and sp² (graphite-like and low-resistive state) for a matrix of carbon clusters in a diamond-like carbon film. The switching process is described using a random circuit breaker network with each breaker controlled by the resistance of clusters sp²/sp³. The key feature of the proposed model is the thermal stress-induced transition from sp² to sp³ phase and the electric field-induced transition from sp³ to sp² phase. Compared with experiments on the switching biasing scheme, a good agreement between simulation and measured data validated the accuracy of the proposed model.