Free-standing graphene on microstructured silicon vertices for enhanced field emission properties
Abstract
Controlled deposition of
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* Corresponding authors
a
Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion, Crete, Greece
E-mail:
stratak@iesl.forth.gr
b Electrical Engineering Department and Center of Materials Technology & Photonics, School of Applied Technology, Technological Educational Institute of Crete, Heraklion, Crete, Greece
c Department of Materials Science and Technology, University of Crete, 710 03 Heraklion, Crete, Greece
d Imperial College London, Dept. of Materials, London, UK
e Department of Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
f Department of Physics, University of Crete, 714 09 Heraklion, Crete, Greece
Controlled deposition of
E. Stratakis, G. Eda, H. Yamaguchi, E. Kymakis, C. Fotakis and M. Chhowalla, Nanoscale, 2012, 4, 3069 DOI: 10.1039/C2NR30622K
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