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Issue 8, 2012
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Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

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Abstract

Silicon nanowires are observed to behave as chemically modulated resistors and exhibit sensitive and fast electrical responses to vapors of common nitro explosives and their degradation by-products. The nanowires were prepared with a top-down nano-fabrication process on a silicon-on-insulator wafer. The surface of the silicon nanowires was modified by plasma treatments. Both hydrogen and oxygen plasma treatments can significantly improve the responses, and oxygen plasma changes the majority carrier from p- to n-type on the surface of silicon nanowire thin films. The sensitivity is found to increase when the cross-section of the nanowires decreases.

Graphical abstract: Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

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Publication details

The article was received on 13 Jan 2012, accepted on 16 Feb 2012 and first published on 24 Feb 2012


Article type: Paper
DOI: 10.1039/C2NR30107E
Citation: Nanoscale, 2012,4, 2628-2632
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    Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

    D. Wang, H. Sun, A. Chen, S. Jang, A. K.-Y. Jen and A. Szep, Nanoscale, 2012, 4, 2628
    DOI: 10.1039/C2NR30107E

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