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Issue 6, 2012
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Identification of structural defects in graphitic materials by gas-phase anisotropic etching

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Abstract

We developed a method of identifying the structural defects in graphitic materials by an anisotropic etching technique. Intrinsic and oxygen- or argon- plasma induced artificial defects’ density and domain size can be obtained easily and precisely. It was inferred, through our investigations, that the grade ZYA highly oriented pyrolytic graphite (HOPG) sample has a better crystal quality, with a lower defect density, while the Kish graphite has a larger grain size and higher defect density. Defect types and lattice orientations can also be extracted by this technique. Furthermore, this method could apply to various graphitic materials including graphene.

Graphical abstract: Identification of structural defects in graphitic materials by gas-phase anisotropic etching

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Publication details

The article was received on 10 Nov 2011, accepted on 08 Dec 2011 and first published on 13 Dec 2011


Article type: Paper
DOI: 10.1039/C2NR11707J
Citation: Nanoscale, 2012,4, 2005-2009
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    Identification of structural defects in graphitic materials by gas-phase anisotropic etching

    S. Wu, R. Yang, D. Shi and G. Zhang, Nanoscale, 2012, 4, 2005
    DOI: 10.1039/C2NR11707J

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