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Issue 4, 2012
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Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

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Abstract

Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.

Graphical abstract: Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

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Publication details

The article was received on 31 Oct 2011, accepted on 20 Dec 2011 and first published on 04 Jan 2012


Article type: Communication
DOI: 10.1039/C2NR11627H
Citation: Nanoscale, 2012,4, 1263-1266
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    Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

    Z. Li, A. J. Du, Q. Sun, M. Aljada, Z. H. Zhu and G. Q. (. Lu, Nanoscale, 2012, 4, 1263
    DOI: 10.1039/C2NR11627H

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