Issue 4, 2012
From the journal:

Nanoscale

Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires†‡

Zhen Li,*a   Ai Jun Du,b   Qiao Sun,b   Muhsen Aljada,c   Zhong Hua Zhud  and  Gao Qing (Max) Lu*a  

* Corresponding authors

a ARC Centre of Excellence for Functional Nanomaterials, Australian Institute for Bioengineering and Nanotechnology (AIBN), The University of Queensland (UQ), QLD 4072, Australia
E-mail: z.li3@uq.edu.au, m.lu@uq.edu.au
Fax: +61-7-3346 3973
Tel: +61-7-3346 3817

b Centre for Computational Molecular Science, AIBN, UQ, Australia

c Centre for Organic Photonics and Electronics, UQ, Australia

d School of Chemical Engineering, UQ, Australia

Abstract

Field-effect transistors (FETs) fabricated from undoped and Co2+-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co2+-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.

Graphical abstract: Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

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Article information

DOI
https://doi.org/10.1039/C2NR11627H
Article type
Communication
Submitted
31 Oct 2011
Accepted
20 Dec 2011
First published
04 Jan 2012

Nanoscale, 2012,4, 1263-1266

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Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires

Z. Li, A. J. Du, Q. Sun, M. Aljada, Z. H. Zhu and G. Q. (. Lu, Nanoscale, 2012, 4, 1263 DOI: 10.1039/C2NR11627H

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