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Issue 2, 2012
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Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell

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Abstract

In this work, we report on the synthesis and the electrical properties of ZnO nanoparticles, which differ in their organic shell. The introduction of a 2-ethylhexanoate shell instead of a common acetate shell has an impact on the accessible size of the ZnO nanoparticles and changes the electrical properties of thin films in transistors. While acetate covered ZnO particles behave as a semiconductor with an electron mobility of 0.38 cm2 V−1 s−1, the 2-ethylhexanoate ligand shell inhibits a charge transport resulting in insulating films (with an average εr = 9.4). These films can be reconverted to semiconductive layers by removing the ligand shell with oxygen plasma treatment or they can be used as a solution processed dielectric layer in organic transistors. Its use as dielectric allows low voltage device operation and shows potential application as a charge storage layer as needed in non-volatile memory transistors.

Graphical abstract: Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell

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Publication details

The article was received on 26 Oct 2011, accepted on 21 Nov 2011 and first published on 12 Dec 2011


Article type: Communication
DOI: 10.1039/C2NR11589A
Citation: Nanoscale, 2012,4, 444-447
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    Concept of a thin film memory transistor based on ZnO nanoparticles insulated by a ligand shell

    J. Hirschmann, H. Faber and M. Halik, Nanoscale, 2012, 4, 444
    DOI: 10.1039/C2NR11589A

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