Issue 48, 2012

On the possibility of p-type SnO2

Abstract

SnO2 is an abundant, low cost, natively n-type, wide band gap oxide, which can achieve high conductivities due to facile donor doping. Realization of a p-type SnO2 would, however, open up many new avenues in device applications, and has become a major research goal. Previous experimental and theoretical studies have proved inconclusive, with the p-type ability of SnO2 being both supported and questioned in equal measure. In this study we use state of the art hybrid density functional theory to investigate the nature of intrinsic and extrinsic p-type defects in SnO2. We demonstrate that all the p-type defects considered in SnO2 produce localized hole polarons centered on anion sites. We calculate the thermodynamic ionization energies of these defects, and demonstrate that an efficient p-type SnO2 is not achievable.

Graphical abstract: On the possibility of p-type SnO2

Additions and corrections

Article information

Article type
Paper
Submitted
04 Jul 2012
Accepted
01 Aug 2012
First published
17 Oct 2012

J. Mater. Chem., 2012,22, 25236-25245

On the possibility of p-type SnO2

D. O. Scanlon and G. W. Watson, J. Mater. Chem., 2012, 22, 25236 DOI: 10.1039/C2JM34352E

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